Origin |
China |
Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GAN for LED's.
Crystal materials: 99,996% of Al2O3, High Purity, Monocrystalline
Crystal quality: Block marks, twins, Color, micro-bubbles and dispersal centers are non-existent
Pattern spec. will be given to you on the quotation
Diameter: 50.8±0.1mm
Thickness: 250±15 µm, 330±15 µm, 430±15 µm
Orientation: C-plane, M-plane, A-plane, R-plane, C-plane off M-plane, C-plane off A-plane
Primary flat length: 16.0±0.8 mm
TTV≤10 µm
BOW≤10 µm
Warp≤10 µm
Front Surface: Epi-polished, Ra< 0.2nm (By AFM)
Back Surface: Fine ground (Ra=0.5 to 1.2 µm) or Epi-polished (Ra< 0.2 nm)
Cleaning/packaging: Class 100 clean room cleaning, vacuum packaging derived nitrogen; 25 pieces in one cassette or single packaging.
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