Origin	China
Model Number	2 inch-7 inch

Our sapphire substrate can be used as the substrate for the growth of III-V compounds such as GAN for LED's.

Crystal materials: 99,996% of Al₂O₃, High Purity, Monocrystalline

Crystal quality: Block marks, twins, Color, micro-bubbles and dispersal centers are non-existent

Diameter: 2inch-7inch

Thickness: 250±15 µm, 330±15 µm, 430±15 µm, 500±15 µm, 550±15 µm, 600±15 µm

Orientation: C-plane(0001), M-plane, A-plane, R-plane

Primary flat Orientation: A-plane (1 1-2 0) ± 0.2°

Primary flat length: 16.0±0.8 mm, 22.0±1.0mm, 32.5±1.5mm

TTV≤10 µm , ≤15µm, ≤20µm , ≤30µm

LTV≤10 µm , ≤15µm, ≤20µm , ≤30µm

TIR≤10 µm , ≤15µm, ≤20µm , ≤30µm

BOW≤10 µm , ≤15µm, ≤20µm , ≤30µm

Warp≤10 µm , ≤15µm, ≤20µm , ≤30µm

Front Surface: Epi-polished, Ra< 0.2nm (By AFM)

Back Surface: Fine ground (Ra=0.5 to 1.2 µm) or Epi-polished (Ra< 0.2 nm)

Cleaning/packaging: Class 100 clean room cleaning, vacuum packaging derived nitrogen; 25 pieces  in one cassette packaging or individual packaging.

Note: The sapphire substrate can be provided according to your specific requirements.

If there is anything we can do for you, please do not hesitate to contact us.